- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369461 > BFR93 (NXP SEMICONDUCTORS) NPN 5GHz wideband transistor(NPN 5G赫茲 寬帶晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | BFR93 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 5GHz wideband transistor(NPN 5G赫茲 寬帶晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | BFR93 |
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
FEATURES
Very low intermodulation distortion
High power gain
Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
page
MSB003
Top view
1
2
3
Marking code:
R1p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
open emitter
open base
0.8
5
15
12
35
300
V
V
mA
mW
pF
GHz
T
s
≤
95
°
C
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
j
= 25
°
C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°
C
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°
C
I
C
= 30 mA; V
CE
= 5 V; R
L
= 75
;
V
O
= 300 mV; f
p
+ f
q
f
r
= 493.25 MHz;
T
amb
= 25
°
C
G
UM
maximum unilateral power gain
16.5
dB
F
noise figure
1.9
dB
d
im
intermodulation distortion
60
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
15
12
2
35
300
+150
175
V
V
V
mA
mW
°
C
°
C
T
s
≤
95
°
C; note 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFR96S | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | SOT-37 |
| BFR97 | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | TO-39 |
| BFR99A | TRANSISTOR | BJT | PNP | 50MA I(C) | TO-72 |
| BFQ35 | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 200MA I(C) | TO-39 |
| BFQ36 | TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 200MA I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFR93,215 | 制造商:NXP Semiconductors 功能描述: |
| BFR93 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR93/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFR93A | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 12V 0.035A 3-Pin TO-236AB Bulk 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR NPN SOT-23 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-23 制造商:Infineon Technologies AG 功能描述:NPN bipolar RF BFR93A 6GHz 制造商:NXP Semiconductors 功能描述:NPN bipolar RF BFR93A 6GHz |
| BFR93A T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 12V 0.035A 3-Pin TO-236AB T/R |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。