參數(shù)資料
型號(hào): BFR92AT
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN 5 GHz wideband transistor
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-75, 3 PIN
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 90K
代理商: BFR92AT
2000 Mar 28
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
3.5
TYP.
90
0.6
0.9
0.35
5
14
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain; note 1
I
E
= 0; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
I
C
= 5 mA; V
CE
= 10 V; f = 2 GHz;
Γ
s
=
Γ
opt
50
nA
pF
pF
pF
GHz
dB
8
dB
F
noise figure
2
3
dB
dB
G
UM
10
s
)
1
(
1
s
112
(
s
222
)
-------------------------------------------------------- dB
log
=
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