參數(shù)資料
型號: BFR90A
英文描述: Silicon NPN Planar RF Transistor
中文描述: 硅NPN平面射頻晶體管
文件頁數(shù): 1/6頁
文件大?。?/td> 70K
代理商: BFR90A
BFR90A
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (6)
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
High power gain
Low noise figure
High transition frequency
1
3
2
94 9308
BFR90A Marking: BFR90A
Plastic case (TO 50)
1= Collector; 2= Emitter; 3= Base
Absolute Maximum Ratings
Parameters
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2
30
300
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
60
°
C
–65 to +150
Maximum Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient on glass fibre printed board
(40 x 25 x 1.5) mm
3
plated with 35 m Cu
R
thJA
300
K/W
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