參數(shù)資料
型號(hào): BFR540
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFR540<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR540<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁(yè)數(shù): 6/14頁(yè)
文件大小: 147K
代理商: BFR540
BFR540
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 13 September 2011
6 of 14
NXP Semiconductors
BFR540
NPN 9 GHz wideband transistor
V
CE
= 8 V; I
C
= 10 mA.
Gain as a function of frequency; I
C
= 10 mA.
V
CE
= 8 V; I
C
= 40 mA.
Gain as a function of frequency; I
C
= 40 mA.
Fig 7.
Fig 8.
V
CE
= 8 V.
Minimum noise figure and associated
available gain as a function of collector
current.
V
CE
= 8 V.
Fig 9.
Fig 10. Minimum noise figure and associated
available gain as a function of frequency.
f (MHz)
10
10
4
10
3
10
2
mra692
20
30
10
40
50
gain
(dB)
0
G
UM
G
max
MSG
f (MHz)
10
10
4
10
3
10
2
mra693
20
30
10
40
50
gain
(dB)
0
G
UM
G
max
MSG
mra698
2
3
1
4
5
F
min
(dB)
0
5
10
0
15
20
G
ass
(dB)
5
I
C
(mA)
1
10
2
10
F
min
G
ass
900
1000
500
900
2000
2000
f (MHz)
mra699
2
3
1
4
5
F
min
(dB)
0
5
10
0
15
20
G
ass
(dB)
5
f (MHz)
10
4
10
3
10
2
10
40
10
40
I
C
(mA)
F
min
G
ass
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