參數(shù)資料
型號: BFR30
廠商: NXP Semiconductors N.V.
元件分類: JFETs
英文描述: N-channel FET
封裝: BFR30<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR30<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF
文件頁數(shù): 13/13頁
文件大?。?/td> 271K
代理商: BFR30
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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Interface, Security and Digital Processing expertise
Contact information
For additional information please visit:
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NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands
R77/02/pp
13
Date of release:
1997 Dec 05
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFR30 T/R 功能描述:射頻雙極小信號晶體管 N-CH 25V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFR30,215 功能描述:JFET N-CH 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
BFR30,235 功能描述:射頻JFET晶體管 N-Channel Single ’+/- 25V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
BFR30LT1 功能描述:射頻JFET晶體管 25V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
BFR30LT1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:JFET Amplifier