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參數(shù)資料
| 型號： | BFR183T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(集電極電流65mA,低噪高增益放大器應(yīng)用的NPN平面型晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（集電極電流65毫安，低噪高增益放大器應(yīng)用的npn型平面型晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | BFR183T |
BFR183T/BFR183TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
4 (4)
Rev. 2, 20-Jan-99
Document Number 85026
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFR183TW | Silicon NPN Planar RF Transistor |
| BFR183T | Silicon NPN Planar RF Transistor |
| BFR193T | Silicon NPN Planar RF Transistor |
| BFR193T | Silicon NPN Planar RF Transistor(集電極電流80mA,低噪高增益放大器應(yīng)用的NPN平面型晶體管) |
| BFR193TW | Silicon NPN Planar RF Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFR183TE6327XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 12V 0.065A 3-Pin SC-75 T/R |
| BFR183TF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFR183TW | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFR183W | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Infineon Technologies AG 功能描述:RF TRANSISTOR SOT-323 制造商:Infineon Technologies AG 功能描述:RF TRANSISTOR, SOT-323 制造商:Infineon Technologies AG 功能描述:RF TRANSISTOR, SOT-323; Power Dissipation Pd:450mW; Operating Temperature Min:-65C; Operating Temperature Max:150C; RF Transistor Case:SOT-323; No. of Pins:3; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:65mA ;RoHS Compliant: Yes |
| BFR183W_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
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