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參數(shù)資料
| 型號(hào)： | BFQ67 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 8 GHz wideband transistor |
| 封裝： | BFQ67<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | BFQ67 |
1998 Aug 27
3
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector lead.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
100
0.7
1.3
0.5
8
14
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
I
E
= 0; V
CB
= 5 V
I
C
= 15 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
s
=
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz; Z
s
= 60
s
=
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz; Z
s
= 60
50
nA
pF
pF
pF
GHz
dB
8
1.3
dB
dB
F
noise figure
1.7
dB
2.2
dB
2.5
dB
2.7
dB
3
dB
G
UM
10 log
S
2
1
S
11
2
–
1
S
22
2
–
----------------------------------------------------------dB
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ67,215 | 功能描述:射頻雙極小信號(hào)晶體管 NPN 50MA 10V 8GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ67,215-CUT TAPE | 制造商:NXP 功能描述:BFQ67 Series 10 V 300 mW 8 GHz Wideband NPN Transistor - SOT-23 |
| BFQ67_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFQ67215 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 10V 8GHZ |
| BFQ67F | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
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