參數(shù)資料
型號: BFQ591
廠商: NXP Semiconductors N.V.
元件分類: 振蕩器
英文描述: NPN 7 GHz wideband transistor
封裝: BFQ591<SOT89 (SOT89)|<<http://www.nxp.com/packages/SOT89.html<1<week 28, 2003,;
文件頁數(shù): 2/11頁
文件大?。?/td> 252K
代理商: BFQ591
NXP
Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BFQ591
BCp
PIN
DESCRIPTION
1
2
3
emitter
collector
base
3
2
1
Fig.1 Simplified outline (SOT89).
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
90
0.8
7
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
open emitter
open base
20
15
200
2.25
250
V
V
mA
W
T
s
90
°
C; note 1
I
C
= 70 mA; V
CE
= 8 V
I
C
= 0; V
CB
= 12 V; f = 1 MHz
I
C
= 70 mA; V
CE
= 12 V;
f = 1 GHz
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
°
C
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
°
C
pF
GHz
G
UM
maximum unilateral power gain
11
dB
|
s
21
|
2
insertion power gain
10
dB
Rev. 04 - 2 October 2007
2 of 11
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