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參數(shù)資料
| 型號(hào)： | BFQ540 |
| 廠(chǎng)商： | NXP Semiconductors N.V. |
| 元件分類(lèi)： | 振蕩器 |
| 英文描述： | NPN wideband transistor |
| 封裝： | BFQ540<SOT89 (SOT89)|<<http://www.nxp.com/packages/SOT89.html<1<week 28, 2003,; |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | BFQ540 |
NXP
Semiconductors
Product specification
NPN wideband transistor
BFQ540
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
d
im
=
60 dB (DIN45004B); V
CE
= 8 V; I
C
= 40 mA; R
L
= 50
;
V
p
= V
o
; V
q
= V
o
6 dB; V
r
= V
o
6 dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.5 MHz;
measured at f
p
+ f
q
f
r
= 793.25 MHz.
d
im
=
60 dB (DIN 45004B); I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
;
V
p
= V
q
= V
o
; f
p
= 806 MHz; f
q
= 810 MHz;
measured at 2f
p
f
q
= 802 MHz.
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
;
V
p
= V
q
= 225 mV; f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
120
9
MAX.
50
200
250
UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
collector-base breakdown voltage
collector-emitter breakdown voltage R
BE
= 0; I
C
= 40
μ
A
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
transition frequency
open emitter; I
C
= 10
μ
A; I
E
= 0
20
15
2
100
V
V
V
nA
nA
I
E
= 100
μ
A; I
C
= 0
V
CB
= 8 V; I
E
= 0
V
CB
= 1 V; I
C
= 0
I
C
= 40 mA; V
CE
= 8 V
I
C
= 40 mA; V
CE
= 8 V;
f
m
= 1 GHz
I
C
= i
e
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°
C
note 1
note 2
note 3
GHz
C
e
C
re
emitter capacitance
feedback capacitance
insertion power gain
12
2
0.9
13
pF
pF
dB
V
o
output voltage
500
350
53
mV
mV
dB
d
2
second order intermodulation
distortion
noise figure
F
I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz;
Γ
S
=
Γ
opt
1.9
2.4
dB
s
21
2
Rev. 04 - 25 September 2007
4 of 8
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