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參數(shù)資料
| 型號： | BFQ246 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP video transistor(PNP視頻晶體管) |
| 中文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BFQ246 |
1996 Sep 04
3
Philips Semiconductors
Product specification
PNP video transistor
BFQ246
Fig.2 DC SOAR.
T
s
= 60
°
C.
handbook, halfpage
MBG511
10
2
10
10
2
3
10
3
10
VCE (V)
IC
(mA)
Fig.3 Power derating curve.
V
CE
≤
50 V.
handbook, halfpage
Ptot
(W)
0
1
2
3
0
100
200
Ts (
o
C)
MBG512
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature of the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
tot
= 3 W; up to T
s
= 60
°
C; note 1
38.5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
95
3
20
TYP.
MAX.
100
UNIT
V
(BR)CBO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
=
1 mA; R
BE
= 100
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
I
C
=
0.1 mA; I
E
= 0
V
V
V
μ
A
I
C
= 0; I
E
=
0.1 mA
V
CE
=
50 V; V
BE
= 0
I
C
=
25 mA; V
CE
=
10 V;
see Fig.4
I
C
=
25 mA; V
CE
=
10 V;
f = 500 MHz; see Fig.5
I
C
= 0; V
CB
=
10 V;
f = 1 MHz; see Fig.6
f
T
transition frequency
1
GHz
C
re
feedback capacitance
1.7
pF
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