參數(shù)資料
型號: BFQ235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN video transistor
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-202
文件頁數(shù): 3/8頁
文件大小: 67K
代理商: BFQ235
1998 Oct 06
3
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
100
°
C; note 1
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
35
MAX. UNIT
100
20
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 10 mA; I
B
= 0
collector-emitter breakdown voltage I
C
= 10 mA; R
BE
= 100
emitter-base breakdown voltage
collector cut-off current
collector cut-off current
DC current gain
I
C
= 0.1 mA; I
E
= 0
115
95
110
3
20
V
V
V
V
μ
A
μ
A
I
E
= 0.1 mA; I
C
= 0
I
B
= 0; V
CE
= 50 V
I
E
= 0; V
CB
= 50 V
I
C
= 50 mA; V
CE
= 10 V; T
amb
= 25
°
C;
see Fig.4
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz;
T
amb
= 25
°
C; see Fig.6
I
C
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
°
C; see Fig.5
f
T
transition frequency
0.8
1.2
GHz
C
cb
collector-base capacitance
2
pF
Fig.2 DC SOAR.
handbook, halfpage
IC
(mA)
MBB887
0
300
200
0
20
40
60
100
80
VCEO (V)
Fig.3 Power derating curve.
handbook, halfpage
Ptot
(W)
0
50
100
200
2
0
MBB888
150
3
1
Ts (
o
C)
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