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參數(shù)資料
| 型號： | BFQ162 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CANMS3126E16-8PF0 |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | PLASTIC, TO-126, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BFQ162 |
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ162
FEATURES
Low output capacitance
Good thermal stability
Gold metallization ensures
excellent reliability.
APPLICATIONS
Pre-stage driver in high-resolution
colour graphics monitors.
DESCRIPTION
NPN video transistor in a SOT32
(TO-126) package.
PINNING
PIN
DESCRIPTION
1
2
3
emitter
collector
base
Fig.1
Simplified outline
(SOT32; TO-126).
halfpage
MBC077 - 1
1
2
3
Top view
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
R
BE
= 100
50
1
60
20
19
500
3
V
V
mA
W
T
s
≤
115
°
C; note 1
I
C
= 300 mA; V
CE
= 5 V; T
amb
= 25
°
C
I
C
= 300 mA; V
CE
= 5 V; f = 100 MHz;
T
amb
= 25
°
C
GHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
R
BE
= 100
open collector
65
20
10
19
3
500
3
+175
175
V
V
V
V
mA
W
°
C
°
C
T
s
≤
115
°
C; note 1; see Fig.3
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