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參數(shù)資料
| 型號： | BFM520 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | Dual NPN wideband transistor |
| 封裝： | BFM520<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,; |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 301K |
| 代理商： | BFM520 |
1996 Oct 08
2
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
FEATURES
Small size
Temperature and h
FE
matched
Low noise and high gain
High gain at low current and low capacitance at low
voltage
Gold metallization ensures excellent reliability.
APPLICATIONS
Oscillator and buffer amplifiers
Balanced amplifiers
LNA/mixers.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
b
1
e
1
c
2
b
2
e
2
c
1
base 1
emitter 1
collector 2
base 2
emitter 2
collector 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM210
1
3
6
4
2
Top view
c1
c2
e1
e2
b1
b2
5
Marking code
: N2.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
C
re
f
T
feedback capacitance
transition frequency
insertion power gain
I
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 3 V; f = 900 MHz
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
C
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz;
S
=
opt
single loaded
double loaded
0.4
9
14.5
pF
GHz
dB
13
G
UM
maximum unilateral power gain
15
dB
F
noise figure
1.2
1.6
dB
R
th j-s
thermal resistance from junction
to soldering point
230
115
K/W
K/W
s
21
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFM520 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 8V 0.07A 6-Pin TSSOP T/R |
| BFM520,115 | 功能描述:射頻雙極小信號晶體管 NPN DL 70MA 8V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFM520,115-CUT TAPE | 制造商:NXP 功能描述:BFM520 Series 8 V 1 W SMT Dual NPN Wideband Transistor - SOT-363 |
| BFM520115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN DUAL 70MA 8V SOT363 |
| BFM520T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | INDEPENDENT | 20V V(BR)CEO | 70MA I(C) | SOT-363 |
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