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參數(shù)資料
| 型號： | BFM520 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | Dual NPN wideband transistor |
| 封裝： | BFM520<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,; |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 301K |
| 代理商： | BFM520 |
1996 Oct 08
4
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
DC characteristics of the dual transistor
h
FE
ratio of highest and lowest DC
current gain
V
BEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 10
A; I
B
= 0
emitter-base breakdown voltage
collector-base leakage current
DC current gain
I
C
= 2.5
A; I
E
= 0
20
8
2.5
60
120
50
250
V
V
V
nA
I
E
= 2.5
A; I
C
= 0
V
CB
= 6 V; I
E
= 0
I
C
= 20 mA; V
CE
= 6 V
I
C1
= I
C2
= 20 mA;
V
CE1
= V
CE2
= 6 V
I
E1
= I
E2
= 30 mA; T
amb
= 25
C
1
1.2
0
1
mV
AC characteristics of any single transistor
f
T
C
c
C
re
G
UM
transition frequency
collector capacitance
feedback capacitance
maximum unilateral power gain;
note 1
I
C
= 20 mA; V
CE
= 3 V; f = 1 GHz
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 3 V;
T
amb
= 25
C; f = 900 MHz
I
C
= 20 mA; V
CE
= 3 V;
T
amb
= 25
C; f = 2 GHz
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz;
S
=
opt
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz;
S
=
opt
I
C
= 5 mA; V
CE
= 3 V;
f = 2 GHz;
S
=
opt
9
0.5
0.4
15
GHz
pF
pF
dB
9
dB
insertion power gain
13
14.5
dB
F
noise figure
1.2
1.6
dB
1.7
2.1
dB
1.9
dB
s
21
2
G
UM
10
s
1
1
s
112
–
s
222
–
-------------------------------------------------------- dB
log
=
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