參數(shù)資料
型號(hào): BFG92A
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN 5 GHz wideband transistor
封裝: BFG92A/X<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁(yè)數(shù): 3/13頁(yè)
文件大?。?/td> 291K
代理商: BFG92A
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
open emitter
open base
open collector
65
20
15
2
25
400
150
175
V
V
V
mA
mW
°
C
°
C
T
s
60
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
3.5
TYP.
90
0.6
0.9
0.35
5
16
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
I
E
= 0; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
°
C; f = 1 GHz
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
°
C; f = 2 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
°
C; f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
°
C; f = 2 GHz
50
135
nA
pF
pF
pF
GHz
dB
11
dB
F
noise figure
2
dB
3
dB
G
UM
10
S
)
1
2
1
S
11
(
S
22
2
(
)
-------------------------------------------------------------- dB.
log
=
3 of 13
Rev. 06 - 12 March 2008
相關(guān)PDF資料
PDF描述
BFG93A NPN 6 GHz wideband transistor
BFG93A NPN 6 GHz wideband transistor
BFG93A NPN 6 GHz wideband transistor
BFG94 NPN 6 GHz wideband transistor
BFG94 NPN 6 GHz wideband transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFG92A/X 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor
BFG92A/X,215 功能描述:射頻雙極小信號(hào)晶體管 Single NPN 15V 25mA 400mW 65 5GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG92A_98 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor
BFG92AW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | SOT-343
BFG92AW/X 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | SOT-343