- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378414 > BFG541 (NXP Semiconductors N.V.) NPN 9 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號： | BFG541 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFG541<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 298K |
| 代理商： | BFG541 |
September 1995
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2
----------------------------------------------------------
dB.
=
2.
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p
q)
= 898 MHz and at f
(2p
q)
= 904 MHz.
3.
d
im
=
60 dB (DIN 45004B); I
C
= 40 mA; V
CE
= 8 V; Z
L
= Z
s
= 75
; T
amb
= 25
C;
V
p
= V
o
; V
q
= V
o
6 dB; V
r
= V
o
6 dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p
q
r)
= 793.25 MHz
4.
I
C
= 40 mA; V
CE
= 8 V; V
o
= 325 mV; T
amb
= 25
C;
f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
(p
q)
= 810 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
2
1
0.7
9
MAX.
UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 8 V
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
I
c
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
C
I
c
= 40 mA; V
CE
= 8 V; R
L
= 50
f = 900 MHz; T
amb
= 25
C
note 2
note 3
note 4
50
250
nA
pF
pF
pF
GHz
G
UM
maximum unilateral power gain
(note 1)
15
dB
9
dB
S
21
2
insertion power gain
13
14
dB
F
noise figure
1.3
1.8
dB
1.9
2.4
dB
2.1
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
21
dBm
ITO
V
o
d
2
34
500
50
dBm
mV
dB
G
UM
10 log
S
1
1
S
11
–
S
22
2
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFG541 | NPN 9 GHz wideband transistor |
| BFG541 | NPN 9 GHz wideband transistor |
| BFG590 | NPN 5 GHz wideband transistor |
| BFG590 | NPN 5 GHz wideband transistor |
| BFG591 | NPN 7 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG541 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.12A 4-Pin(3+Tab) SOT-223 T/R |
| BFG541,115 | 功能描述:射頻雙極小信號晶體管 NPN 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG541,115-CUT TAPE | 制造商:NXP 功能描述:BFG541 Series 15 V 650 mW 9 GHz Wideband NPN Transistor - SOT223 |
| BFG541/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR NPN HF |
| BFG541115 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 15V 9GHZ |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。