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參數(shù)資料
| 型號： | BFG520W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFG520W<SOT343N (SOT343N)|<<http://www.nxp.com/packages/SOT343N.html<1<week 52, 2002,;BFG520W/X<SOT343N (SOT343N)|<<http://www.nxp.com/packages/SOT343N.html<1<week |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 305K |
| 代理商： | BFG520W |
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero.
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
; T
amb
= 25
°
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at 2f
p
f
q
= 898 MHz and 2f
q
f
p
= 904 MHz.
d
im
=
60 dB (DIN45004B); I
C
= 20 mA; V
CE
= 6 V; V
p
= V
o
; V
q
= V
o
6 dB; V
r
= V
o
6 dB; R
L
= 75
;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
p
+ f
q
f
r
= 793.25 MHz.
I
C
= 20 mA; V
CE
= 6 V; V
o
= 75 mV; R
L
= 75
; T
amb
= 25
°
C;
f
p
= 250 MHz; f
q
= 560 MHz; measured at f
p
+ f
q
= 810 MHz.
3.
4.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
120
0.35
MAX.
50
250
UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 10
μ
A; R
BE
= 0
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
I
C
=10
μ
A; I
E
= 0
20
15
2.5
60
V
V
V
nA
I
E
= 10
μ
A; I
C
= 0
V
CB
= 6 V; I
E
= 0
I
C
= 20 mA; V
CE
= 6 V; see Fig.3
I
C
= 0; V
CB
= 6 V; f = 1 MHz;
see Fig.4
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°
C; see Fig.5
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°
C
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
R
L
= 50
; T
amb
= 25
°
C
note 2
note 3
note 4
pF
f
T
transition frequency
9
GHz
G
UM
maximum unilateral power gain;
note 1
17
dB
11
dB
|S
21
|
2
insertion power gain
16
17
dB
F
noise figure
1.1
1.6
dB
1.6
2.1
dB
1.85
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
17
dBm
ITO
V
o
d
2
26
275
50
dBm
mV
dB
G
UM
10
S
)
1
2
1
S
11
–
(
S
22
2
–
(
)
-------------------------------------------------------------- dB.
log
=
Rev. 04 - 21 November 2007
4 of 15
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| BFG520W T/R | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG520W,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG520W/X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 9 GHz wideband transistors |
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| BFG520W/X,115-CUT TAPE | 制造商:NXP 功能描述:BFG520W/X Series 15 V 500 mW 9 GHz SMT NPN Wideband Transistor - SOT-343N |
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