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參數(shù)資料
| 型號： | BFG197 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 7 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BFG197 |
1995 Sep 13
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
T
S
is the temperature at the soldering point of the collector tab.
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature range
junction operating temperature
open emitter
open base
open collector
DC value, continuous
up to T
s
= 75
°
C; note 1
20
10
2.5
100
350
+150
175
V
V
V
mA
mW
°
C
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
from junction to soldering point; note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
TYP.
110
1.5
3.3
0.85
7.5
16
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
I
E
= 0; V
CB
= 5 V
I
C
= 50 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 4 V; f = 2 GHz
I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
°
C; f = 1 GHz
I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
°
C; f = 2 GHz
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
°
C; f = 2 GHz
V
CE
= 6 V;V
o
= 50 dBmV;
100
nA
pF
pF
pF
GHz
dB
10
dB
F
noise figure
1.7
dB
2.3
dB
d
2
second order intermodulation
distortion
51
dB
G
UM
10
s
)
1
2
1
s
11
–
(
s
22
2
–
(
)
------------------------------------------------------------ dB.
log
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG197/X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 7 GHz wideband transistor |
| BFG197/XR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 7 GHz wideband transistor |
| BFG197W | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343 |
| BFG197W/X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343 |
| BFG197W/XR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343R |
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