參數(shù)資料
型號(hào): BFG17
廠商: NXP Semiconductors N.V.
英文描述: NPN 3 GHz wideband transistor
中文描述: 叩3千兆赫寬帶晶體管
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 60K
代理商: BFG17
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
Fig.2 Intermodulation distortion and second order intermodulation distortion MATV test circuit.
(1) L1 = L3 = 5
μ
H Ferroxcube choke.
(2) L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
handbook, full pagewidth
MBB251
18
1.5 nF
10 k
L2
L1
1 nF
75
input
270
1 nF
L3
1.5 nF
1 nF
0.68 pF
3.3 pF
DUT
75
output
VCC
VBB
Fig.3
DC current gain as function of collector
current.
V
CE
= 1 V; T
amb
= 25
°
C.
handbook, halfpage
MBB374
80
0
10
20
30
0
IC
hFE
40
Fig.4
Collector capacitance as a function of
collector-base voltage.
I
E
= 0; f = 1 MHz; T
amb
= 25
°
C
handbook, halfpage
MBB370
0
0.8
0.4
0
4
8
12
16
VCB
Cc
(pF)
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