參數(shù)資料
型號(hào): BF998WR
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF998WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;
文件頁(yè)數(shù): 3/13頁(yè)
文件大小: 255K
代理商: BF998WR
1997 Sep 05
3
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
65
12
30
10
10
300
+150
+150
V
mA
mA
mA
mW
C
C
up to T
amb
= 45
C; see Fig.2; note 1
Fig.2 Power derating curve.
handbook, halfpage
Ptot
(mW)
0
50
100
200
0
MLD154
150
200
300
100
amb
o
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