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參數(shù)資料
| 型號： | BF998RW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 155K |
| 代理商： | BF998RW |
BF998/BF998R/BF998RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 23-Jun-99
1 (9)
Document Number 85011
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
Integrated gate protection diodes
Low noise figure
Low feedback capacitance
High cross modulation performance
Low input capacitance
High AGC-range
High gain
13 579
2
1
4
3
94 9279
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
95 10831
2
1
4
3
94 9278
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
3
4
13 566
13 654
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998B | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RAW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RB | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998RW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-343R T/R |
| BF998T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998W | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| BF998WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
| BF998WR T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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