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參數(shù)資料
| 型號(hào)： | BF990A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel dual-gate MOS-FET(N溝道雙柵極場效應(yīng)管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SOT-143, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 71K |
| 代理商： | BF990A |
April 1991
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V; T
amb
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
25
±
25
±
20
±
20
1.3
1.1
UNIT
I
G1-SS
I
G2-SS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(P)G1-S
gate 1-source cut-off voltage
V
(P)G2-S
gate 2-source cut-off voltage
gate 1 cut-off current
gate 2 cut-off current
V
G1-S
=
±
7 V; V
G2-S
= V
DS
= 0
V
G2-S
=
±
7 V; V
G1-S
= V
DS
= 0
I
G1-SS
=
±
10 mA; V
G2-S
= V
DS
= 0
I
G2-SS
=
±
10 mA; V
G1-S
= V
DS
= 0
I
D
= 20
μ
A; V
DS
= 10 V; V
G2-S
= 4 V
I
D
= 20
μ
A; V
DS
= 10 V; V
G1-S
= 0
±
8
±
8
nA
nA
V
V
V
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
3
3
UNIT
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
S
= 5 mS; B
S
= B
Sopt
18
19
2.6
1.4
25
1.2
2
mS
pF
pF
fF
pF
dB
C
ig1-s
C
ig2-s
C
rs
C
os
F
Y
fs
Fig.3 Output characteristics.
V
G2-S
= 4 V; T
amb
= 25
°
C.
handbook, halfpage
0
4
8
16
0
12
VDS (V)
10
ID
(mA)
MGD833
VG1
S
+
0.4 V
+
0.2 V
0 V
0.2 V
0.4 V
0.6 V
Fig.4 Transfer characteristics.
V
DS
= 10 V; V
G2-S
= 4 V; T
amb
= 25
°
C.
handbook, halfpage
1.5
1.0
ID
(mA)
0
8
16
1.0
0.5
0
0.5
VG1-S (V)
MGD832
max
typ
min
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