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參數(shù)資料
| 型號(hào)： | BF966S |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 127K |
| 代理商： | BF966S |
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (8)
Document Number 85004
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
1
4
3
2
94 9307
96 12647
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
V
DS
I
D
±
I
G1/G2SM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
Unit
V
mA
mA
mW
C
C
T
amb
≤
60 C
–55 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
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