參數(shù)資料
型號: BF747
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN 1 GHz wideband transistor(NPN 1GHz寬帶晶體管)
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SOT-23, 3 PIN
文件頁數(shù): 2/11頁
文件大?。?/td> 96K
代理商: BF747
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF747
FEATURES
Stable oscillator operation
High current gain
Good thermal stability.
APPLICATIONS
It is intended for VHF and UHF TV-tuner applications
and can be used as a mixer and/or oscillator.
DESCRIPTION
Low cost NPN transistor in a plastic SOT23 package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
Marking code:
E15.
handbook, halfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
1.2
MAX. UNIT
V
CEO
V
CBO
V
EBO
I
CM
P
tot
f
T
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
transition frequency
open base
open emitter
open collector
20
30
3
50
300
1.6
V
V
V
mA
mW
GHz
up to T
s
= 70
°
C; note 1
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
55
MAX. UNIT
V
CEO
V
CBO
V
EBO
I
CM
P
tot
T
stg
T
j
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
open base
open emitter
open collector
20
30
3
50
300
+150
150
V
V
V
mA
mW
°
C
°
C
up to T
s
= 70
°
C; note 1
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