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參數(shù)資料
| 型號(hào)： | BF588 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 0.1 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-202 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | BF588 |
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
BF588
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
78
25
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
20
20
100
0.5
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
300 V
I
E
= 0; V
CB
=
200 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
25 mA; V
CE
=
20 V
I
C
=
40 mA; V
CE
=
20 V
I
C
=
20 mA; I
B
=
2 mA
50
20
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter
saturation voltage
collector capacitance
feedback capacitance
transition frequency
V
C
c
C
re
f
T
I
E
= i
e
= 0; V
CB
=
30 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
=
30 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
10 V; f = 100 MHz
70
3
2.2
110
pF
pF
MHz
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