- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369459 > BF547 (NXP SEMICONDUCTORS) NPN 1 GHz wideband transistor(NPN 1GHz寬帶晶體管) PDF資料下載
參數(shù)資料
| 型號： | BF547 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 1 GHz wideband transistor(NPN 1GHz寬帶晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BF547 |
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
FEATURES
Feedback capacitance typ. 1 pF
Stable oscillator operation
High current gain
Good thermal stability.
APPLICATIONS
It is intended for VHF and UHF TV-tuner applications
and can be used as a mixer and/or oscillator.
DESCRIPTION
Low cost NPN transistor in a plastic SOT23 package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
Marking code:
E16.
handbook, halfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CEO
V
CBO
V
EBO
I
CM
P
tot
f
T
C
re
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
transition frequency
feedback capacitance
open base
open emitter
open collector
1.2
1
20
30
3
50
300
1.6
V
V
V
mA
mW
GHz
pF
up to T
s
= 70
°
C; note 1
I
C
= 15 mA; V
CE
10 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CEO
V
CBO
V
EBO
I
CM
P
tot
T
stg
T
j
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature range
junction temperature
open base
open emitter
open collector
65
20
30
3
50
300
+150
150
V
V
V
mA
mW
°
C
°
C
up to T
s
= 70
°
C; note 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF588 | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| BF681 | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 30MA I(C) | TO-50 |
| BF720T3 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SOT-223 |
| BF720 | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| BF720 | Surface mount Si-Epitaxial PlanarTransistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF547T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | SOT-23 |
| BF547W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 1 GHz wideband transistor |
| BF547WT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-236VAR |
| BF550 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
| BF550 /T3 | 功能描述:兩極晶體管 - BJT TRANS MED FREQ TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。