參數(shù)資料
型號(hào): BF510
廠商: NXP Semiconductors N.V.
元件分類(lèi): JFETs
英文描述: N-channel silicon FET
封裝: BF510<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 234K
代理商: BF510
December 1997
2
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1
2
3
= gate
= drain
= source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
2
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to T
amb
= 40
C
V
DS
I
D
max.
max.
20
30
V
mA
P
tot
max.
250
mW
BF510
511
2.5
7.0
512
513
10 mA
18 mA
Drain current
V
DS
= 10 V; V
GS
= 0
0.7
3.0
6
I
DSS
12
Transfer admittance (common source)
V
DS
= 10 V; V
GS
= 0; f = 1 kHz
Feedback capacitance
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
Noise figure at optimum source admittance
G
S
= 1 mS;
B
S
= 3 mS; f = 100 MHz
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
y
fs
2.5
4
6
7 mS
C
rs
C
rs
typ.
typ.
0.3
0.3
pF
0.3 pF
0.3
F
F
typ.
typ.
1.5
1.5
dB
1.5 dB
1.5
相關(guān)PDF資料
PDF描述
BF511 N-channel silicon FET
BF512 N-channel silicon FET
BF513 N-channel silicon FET
BF545A N-channel FET
BF545B N-channel FET
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