參數(shù)資料
型號(hào): BF472
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: PNP high-voltage transistors
中文描述: 50 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 64K
代理商: BF472
1996 Dec 09
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10
×
10 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BF470
BF472
collector-emitter voltage
BF470
BF472
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
250
300
V
V
V
CEO
open base
65
65
250
300
5
50
100
50
1.8
+150
150
+150
V
V
V
mA
mA
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
mb
114
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air; note 1
100
20
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
10
50
600
1.8
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
200 V
I
E
= 0; V
CB
=
200 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
25 mA; V
CE
=
20 V
I
C
=
30 mA; I
B
=
5 mA
I
C
= i
c
= 0; V
CE
=
30 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
10 V; f = 100 MHz
50
60
nA
μ
A
nA
I
EBO
h
FE
V
CEsat
C
re
f
T
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
mV
pF
MHz
相關(guān)PDF資料
PDF描述
BF483 RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 15V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84%
BF487 NPN high-voltage transistors
BF488 PNP high-voltage transistor
BF550R TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25MA I(C) | SOT-23
BF591 NPN high-voltage transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF472S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 30MA I(C) | SOT-32
BF479S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | MACRO-T
BF479T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-50
BF483 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN high-voltage transistors
BF485 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN high-voltage transistors