參數(shù)資料
型號: BF471
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN high-voltage transistors
中文描述: 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 64K
代理商: BF471
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF469; BF471
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead
minimum 10
×
10 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BF469
BF471
collector-emitter voltage
BF469
BF471
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
250
300
V
V
V
CEO
open base
65
65
250
300
5
50
100
50
1.8
+150
150
+150
V
V
V
mA
mA
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
mb
114
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air; note 1
100
20
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5 mA
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
50
60
10
10
50
0.6
1.8
nA
μ
A
nA
I
EBO
h
FE
V
CEsat
C
re
f
T
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
V
pF
MHz
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