參數(shù)資料
型號(hào)： BF450
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： PNP Medium Frequency Transistor
中文描述： 25 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC, SC-43, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 54K
代理商： BF450
1997 Jul 11
3
Philips Semiconductors
Product specification
PNP medium frequency transistor
BF450
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
40
40
4
25
25
300
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
mA
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
420
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
4
100
780
0.55
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
amb
= 150
°
C
I
C
= 0; V
EB
=
3 V
I
C
=
1 mA; V
CE
=
10 V
I
C
=
1 mA; V
CE
=
10 V
I
C
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
1 mA; V
CE
=
10 V; f = 100 MHz
50
680
350
nA
μ
A
nA
I
EBO
h
FE
V
BE
C
re
f
T
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
mV
pF
MHz
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