參數(shù)資料
型號(hào): BF245A
廠商: NXP Semiconductors N.V.
元件分類: JFETs
英文描述: N-channel FET
封裝: BF245A<SOT54 (TO-92)|<<http://www.nxp.com/packages/SOT54.html<1<week 6, 2005,;BF245A<SOT54 (TO-92)|<<http://www.nxp.com/packages/SOT54.html<1<week 6, 2005,;
文件頁(yè)數(shù): 3/13頁(yè)
文件大小: 286K
代理商: BF245A
1996 Jul 30
3
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm
10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
Note
1.
Measured under pulse conditions: t
p
= 300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
30
30
25
10
300
300
+150
150
UNIT
V
DS
V
GDO
V
GSO
I
D
I
G
P
tot
drain-source voltage
gate-drain voltage
gate-source voltage
drain current
gate current
total power dissipation
65
V
V
V
mA
mA
mW
mW
C
C
open source
open drain
up to T
amb
= 75
C;
up to T
amb
= 90
C; note 1
T
stg
T
j
storage temperature
operating junction temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
thermal resistance from junction to ambient
in free air
250
200
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
0.25
MAX.
UNIT
V
(BR)GSS
V
GSoff
V
GS
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
BF245A
BF245B
BF245C
drain current
BF245A
BF245B
BF245C
gate cut-off current
I
G
=
1
A; V
DS
= 0
I
D
= 10 nA; V
DS
= 15 V
I
D
= 200
A; V
DS
= 15 V
8.0
V
V
0.4
1.6
3.2
2.2
3.8
7.5
V
V
V
I
DSS
V
DS
= 15 V; V
GS
= 0; note 1
2
6
12
6.5
15
25
5
0.5
mA
mA
mA
nA
A
I
GSS
V
GS
=
20 V; V
DS
= 0
V
GS
=
20 V; V
DS
= 0; T
j
= 125
C
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