參數(shù)資料
型號(hào): BF1218
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1218<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁(yè)數(shù): 17/23頁(yè)
文件大?。?/td> 672K
代理商: BF1218
BF1218_1
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NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
17 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
8.2.2
Scattering parameters for amplifier B
8.2.3
Noise data for amplifier B
Table 13.
V
DS(B)
= 5 V; V
G2-S
= 4 V; I
D(B)
= 15 mA; V
DS(A)
= 0 V; V
G1-S(A)
= 0 V; T
amb
= 25
C; typical values;
unless otherwise specified.
f (MHz)
NF
min
(dB)
opt
(ratio)
400
1.1
0.72
800
1.4
0.68
Table 12.
V
DS(B)
= 5 V; V
G2-S
= 4 V; I
D(B)
= 15 mA; V
DS(A)
= 0 V; V
G1-S(A)
= 0 V; T
amb
= 25
C; typical values.
f (MHz)
s
11
s
21
Magnitude
(ratio)
(degree)
(ratio)
40
0.9841
4.20
2.9772
100
0.9799
7.68
2.9694
200
0.9775
15.24
2.9472
300
0.9706
22.70
2.9147
400
0.9632
30.08
2.8754
500
0.9515
37.46
2.8213
600
0.9377
44.80
2.7560
700
0.9229
52.10
2.6865
800
0.9062
59.33
2.6119
900
0.8864
66.35
2.5318
1000
0.8650
73.21
2.4437
Scattering parameters for amplifier B
s
12
Magnitude
(ratio)
0.0005
0.0011
0.0023
0.0034
0.0046
0.0056
0.0065
0.0075
0.0084
0.0091
0.0098
s
22
Magnitude
(ratio)
0.9923
0.9927
0.9914
0.9902
0.9888
0.9870
0.9839
0.9810
0.9777
0.9754
0.9714
Angle
Magnitude
Angle
(degree)
175.44
171.40
162.86
154.41
146.10
137.77
129.44
121.24
113.09
105.04
97.11
Angle
(degree)
106.03
88.52
87.60
85.98
85.09
84.03
83.30
82.99
82.08
81.36
80.34
Angle
(degree)
1.40
2.88
5.77
8.61
11.43
14.26
17.16
20.05
22.93
25.77
28.64
Noise data for amplifier B
r
n
(
)
(degree)
22.83
46.42
0.66
0.64
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