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2003 Nov 14
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
(mW)
0
50
100
200
0
200
150
150
100
50
MDB828
(2)
(1)
Ts (
°
C)
Fig.4 Power derating curve.
(1) BF1212WR.
(2) BF1212; BF1212R.
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
R
G1
connects G
1
to V
GG
= 5 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
10
1.5
1.5
1.0
1.0
16
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(F)S-G1
forward source-gate 1 voltage
V
(F)S-G2
forward source-gate 2 voltage
V
G1-S(th)
gate 1-source threshold voltage
V
G2-S(th)
gate 2-source threshold voltage
I
DSX
drain-source current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 100
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 150 k
;
note 1
V
G2-S
= V
DS
= 0 V; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0 V; V
G2-S
= 4 V
6
6
6
0.5
0.5
0.3
0.35
8
V
V
V
V
V
V
V
mA
I
G1-S
I
G2-S
gate 1 cut-off current
gate 2 cut-off current
50
20
nA
nA