參數(shù)資料
型號(hào)： BF1211WR
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF1211WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,;BF1211WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Alwa
文件頁數(shù)： 7/16頁
文件大?。?/td> 415K
代理商： BF1211WR
2003 Dec 16
7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
(mA)
0
50
0
4
8
12
16
10
20
30
40
MDB833
IG1(
μ
A)
Fig.9
Drain current as a function of gate 1 current;
typical values.
V
DS
= 5 V; V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
ID
(mA)
0
1
5
12
4
0
8
2
3
4
MDB834
VGG (V)
Fig.10 Drain current as a function of gate 1 supply
voltage (V
GG
); typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 75 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
(mA)
0
2
4
6
0
16
12
8
4
MDB835
VGG = VDS (V)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Fig.11 Drain current as a function of gate 1 (V
GG
)
and drain supply voltage; typical values.
V
G2-S
= 4 V; T
j
= 25
C; R
G1
connected to V
GG
; see Fig.21.
(1) R
G1
= 47 k
.
(2) R
G1
= 56 k
.
(3) R
G1
= 68 k
.
(4) R
G1
= 75 k
.
(5) R
G1
= 82 k
.
(6) R
G1
= 100 k
.
(7) R
G1
= 120 k
.
handbook, halfpage
(mA)
0
2
4
6
0
16
12
8
4
MDB836
VG2-S (V)
(2)
(1)
(3)
(4)
(5)
Fig.12 Drain current as a function of gate 2
voltage; typical values.
(1) V
GG
= 5 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3 V.
V
DS
= 5 V; T
j
= 25
C; R
G1
= 75 k
(connected to V
GG
); see Fig.21.
相關(guān)PDF資料
PDF描述
BF1211R N-channel dual-gate MOSFET
BF1211WR N-channel dual-gate MOSFET
BF1212 N-channel dual-gate MOSFET
BF1212 N-channel dual-gate MOSFET
BF1212R N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1211WR,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1211WR,135 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF1212 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1212,215 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF-1212-03SV06-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*