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參數(shù)資料
| 型號： | BF1211R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1211R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 415K |
| 代理商： | BF1211R |
2003 Dec 16
6
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
(mA)
0
2.5
0
5
10
15
20
0.5
1
1.5
2
VG1-S (V)
MDB829
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Fig.5 Transfer characteristics; typical values.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
0
2
4
0
8
16
6
MDB830
ID
(mA)
VDS (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Fig.6 Output characteristics; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
(1) V
G1-S
= 1.5 V.
(2) V
G1-S
= 1.4 V.
(3) V
G1-S
= 1.3 V.
(4) V
G1-S
= 1.2 V.
(5) V
G1-S
= 1.1 V.
(6) V
G1-S
= 1 V.
(7) V
G1-S
= 0.9 V.
(8) V
G1-S
= 0.8 V.
handbook, halfpage
(
μ
A)
0
0
20
40
60
80
0.5
1
1.5
2
MDB831
VG1-S (V)
(1)
(2)
(3)
(5)
(4)
(6)
(7)
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
yfs
(mS)
0
6
30
30
10
0
20
12
18
24
MDB832
ID (mA)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.8
Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1211WR | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
| BF1212R | N-channel dual-gate MOSFET |
| BF1212WR | N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1211R,215 | 功能描述:射頻MOSFET電源晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BF1211WR | 功能描述:MOSFET TAPE-7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BF1211WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1211WR,135 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF1212 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
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