參數(shù)資料
型號(hào): BF1202WR
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF1202WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2003,;BF1202WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week
文件頁(yè)數(shù): 6/15頁(yè)
文件大?。?/td> 177K
代理商: BF1202WR
2010 Sep 16
6
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, halfpage
(mA)
0
50
0
4
8
12
16
10
20
30
40
IG1 (
μ
A)
MCD956
Fig.9
Drain current as a function of gate 1 current;
typical values.
V
DS
= 5 V; V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
ID
(mA)
0
VGG (V)
1
5
12
4
0
8
2
3
4
MCD957
Fig.10 Drain current as a function of gate 1 supply
voltage (= V
GG
); typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
(mA)
0
2
4
6
VGG
=
VDS (V)
0
16
12
8
4
MCD958
RG1
=
68 k
Ω
82 k
Ω
100 k
Ω
120 k
Ω
150 k
Ω
180 k
Ω
220 k
Ω
Fig.11 Drain current as a function of gate 1 (= V
GG
)
and drain supply voltage; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
R
G1
connected to V
GG
; see Fig.21.
handbook, halfpage
ID
(mA)
0
2
4
6
12
4
0
8
MCD959
VG2-S (V)
4.5 V
4 V
3 V
VGG
=
5 V
3.5 V
V
DS
= 5 V; T
j
= 25
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
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