參數(shù)資料
型號: BF1202
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel dual-gate MOSFET
封裝: BF1202<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF1202/L<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<Always
文件頁數(shù): 5/15頁
文件大?。?/td> 177K
代理商: BF1202
2010 Sep 16
5
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, halfpage
(mA)
0
2
0
4
8
12
16
0.4
0.8
1.2
1.6
VG1-S (V)
MCD952
VG2-S
=
4 V
2.5 V
3.5 V
3 V
2 V
1.5 V
1 V
Fig.5 Transfer characteristics; typical values.
V
DS
= 5 V.
T
j
= 25
C.
handbook, halfpage
0
10
0
8
16
2
VDS (V)
ID
(mA)
6
4
8
MCD953
VG1-S
=
1.5 V
1.4 V
1.2 V
1.3 V
1.1 V
1 V
0.9 V
Fig.6 Output characteristics; typical values.
V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
(
μ
A)
0
2.5
0
20
40
60
80
0.5
1
1.5
2
VG1-S (V)
MCD954
VG2-S
=
4 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
T
j
= 25
C.
V
DS
= 5 V.
handbook, halfpage
yfs
(mS)
0
ID (mA)
4
20
30
10
0
20
8
12
16
MCD955
3.5 V
2.5 V
3 V
2 V
VG2-S
=
4 V
Fig.8
Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 5 V.
T
j
= 25
C.
相關PDF資料
PDF描述
BF1202R N-channel dual-gate MOSFET
BF1202WR N-channel dual-gate MOSFET
BF1202R N-channel dual-gate MOSFET
BF1202WR N-channel dual-gate MOSFET
BF1203 Dual N-channel dual-gate MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
BF1202,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1202.215 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1202/L,215 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF1202_10 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1202R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs