參數(shù)資料
型號: BF1201WR
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF1201WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2003,;BF1201WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week
文件頁數(shù): 8/15頁
文件大?。?/td> 405K
代理商: BF1201WR
2000 Mar 29
8
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R; BF1201WR
handbook, halfpage
MCD947
10
f (MHz)
Yis
(mS)
10
2
10
3
2
10
1
10
1
bis
gis
Fig.17 Input admittance as a function of frequency;
typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
handbook, halfpage
MCD948
10
f (MHz)
10
2
10
3
3
10
2
10
1
10
3
10
2
10
1
yrs
(
μ
S)
rs
(deg)
rs
yrs
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
handbook, halfpage
2
10
1
10
2
10
1
MCD949
10
10
2
10
3
f (MHz)
yfs
(mS)
fs
(deg)
fs
yfs
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
handbook, halfpage
MCD950
10
bos
f (MHz)
Yos
(mS)
10
2
10
3
1
10
2
10
1
gos
Fig.20 Output admittance as a function of
frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
相關(guān)PDF資料
PDF描述
BF1202 N-channel dual-gate MOSFET
BF1202 N-channel dual-gate MOSFET
BF1202R N-channel dual-gate MOSFET
BF1202WR N-channel dual-gate MOSFET
BF1202R N-channel dual-gate MOSFET
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BF1201WR,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1201WR,135 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1201WR135 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
BF1202 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1202,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel