參數(shù)資料
型號： BF1201R
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF1201R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;
文件頁數(shù)： 2/15頁
文件大?。?/td> 405K
代理商： BF1201R
2000 Mar 29
2
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R;
BF1201WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1201,
BF1201R and BF1201WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1
2
3
4
source
drain
gate 2
gate 1
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.1
Simplified outline
(SOT143B).
BF1201 marking code:
LAp.
handbook, 2 columns
Top view
MSB035
1
2
4
Fig.2
Simplified outline
(SOT143R).
BF1201R marking code:
LBp
lfpage
Top view
MSB842
2
1
4
3
Fig.3
Simplified outline
(SOT343R).
BF1201WR marking code:
LA
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
23
105
28
2.6
15
1
10
30
200
35
3.1
30
1.8
V
mA
mW
mS
pF
fF
dB
dB
V
f = 1 MHz
f = 400 MHz
input level for k = 1% at
40 dB AGC
T
j
operating junction temperature
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
相關PDF資料
PDF描述
BF1201WR N-channel dual-gate MOSFET
BF1201R N-channel dual-gate MOSFET
BF1201WR N-channel dual-gate MOSFET
BF1202 N-channel dual-gate MOSFET
BF1202 N-channel dual-gate MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
BF1201R,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1201R215 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BF1201WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1201WR,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1201WR,135 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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