參數資料
型號： BF1101R
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF1101R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;
文件頁數： 4/15頁
文件大?。?/td> 373K
代理商： BF1101R
1999 May 14
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
R
G1
connects G
1
to V
GG
= 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 12 mA; unless otherwise specified.
Note
1.
Measured in test circuit of Fig.21.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
16
16
1.5
1.5
1.0
1.2
16
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(F)S-G1
forward source-gate 1 voltage
V
(F)S-G2
forward source-gate 2 voltage
V
G1-S (th)
gate 1-source threshold voltage
V
G2-S (th)
gate 2-source threshold voltage
I
DSX
drain-source current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 100
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 120 k
;
note 1
V
G2-S
= V
DS
= 0; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0; V
G2-S
= 4 V
7
7
7
0.5
0.5
0.3
0.3
8
V
V
V
V
V
V
V
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
20
nA
nA
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F
X
mod
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
25
85
30
2.2
1.6
1.2
25
1.7
40
2.7
35
2.5
mS
pF
pF
pF
fF
dB
dB
V
f = 800 MHz; Y
S
= Y
S opt
input level for k = 1% at 0 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 1
input level for k = 1% at 40 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 1
100
dB
V
相關PDF資料
PDF描述
BF1101WR N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
BF1101WR N-channel dual-gate MOSFET
BF1102 N-channel dual-gate MOSFET
BF1102 N-channel dual-gate MOSFET
相關代理商/技術參數
參數描述
BF1101R,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101WR,115 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 7V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101WR,135 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1102 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET
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