參數(shù)資料
型號(hào): BDY185
英文描述: NPN Silicon Transistors. Diffused MESA
中文描述: NPN硅晶體管。漫射梅薩
文件頁數(shù): 2/4頁
文件大?。?/td> 168K
代理商: BDY185
COMSET SEMICONDUCTORS
2/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R
thJ-C
Thermal Resistance, Junction to Case
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
2
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
BDY23, 180T2
60
-
-
BDY24, 181T2
90
-
-
V
CEO(BR)
Collector-Emitter
Breakdown Voltage (*)
I
C
=50 mA, I
B
=0
BDY25, 182T2
140
-
-
V
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
60
100
200
-
-
-
-
-
-
-
-
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
I
C
=3 mA
-
-
-
-
V
V
CE
=60 V
V
CE
=90 V
V
CE
=140 V
I
CEO
Collector-Emitter Cutoff
Current
1.0
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
1.0
mA
V
CE
=60 V
V
BE
=0 V
BDY23, 180T2
-
-
0.5
V
CE
=100 V
V
BE
=0 V
BDY24, 181T2
-
-
1.0
I
CES
Collector-Emitter Cutoff
Current
V
CE
=180 V
V
BE
=0 V
BDY25, 182T2
-
-
1.0
mA
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
-
-
-
-
1
0.6
0.6
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDY20 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device
BDY23 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
BDY23A 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3
BDY23B 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3
BDY23C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3