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參數(shù)資料
| 型號(hào)： | BDY184 |
| 英文描述： | VARISTOR, 150J 21VAC |
| 中文描述： | NPN硅晶體管。漫射梅薩 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | BDY184 |
COMSET SEMICONDUCTORS
3/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
-
-
-
-
-
-
-
2.0
1.2
1.2
-
-
-
45
90
100
V
BE(SAT)
Base-Emitter Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
A
B
C
A
B
C
55
65
90
20
45
82
V
CE
=4 V, I
C
=1 A
15
30
75
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=2 A
-
f
T
Transition Frequency
V
CE
=15 V, I
C
=0.5 A,
f=10 MHz
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
10
-
-
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A,
I
B
=1 A
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
0.3
0.5
μ
s
t
s
+ t
f
Turn-off time
I
C
=5 A,
I
B1
=1 A,
I
B2
=-0.5 A
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
1.5
2.0
μ
s
(*) Pulse Width
≈
300
μ
s, Duty Cycle
∠
2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDY185 | NPN Silicon Transistors. Diffused MESA |
| BDY23B | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3 |
| BDY24C | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| BDX87C | Bipolar NPN Device |
| BDY24B | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDY185 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NPN Silicon Transistors. Diffused MESA |
| BDY20 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device |
| BDY23 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BDY23A | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
| BDY23B | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
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