參數(shù)資料
型號: BDX37
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN switching transistors
中文描述: 5 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/8頁
文件大?。?/td> 71K
代理商: BDX37
1997 Apr 16
2
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
FEATURES
High current (max. 5 A)
Low voltage (max. 75 V).
APPLICATIONS
High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to the metal part of
the mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
BDX35
BDX36; BDX37
collector-emitter voltage
BDX35; BDX36
BDX37
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
open emitter
100
120
V
V
V
CEO
open base
45
100
350
60
75
5
15
450
500
V
V
A
W
I
C
P
tot
h
FE
f
T
t
off
T
mb
75
°
C
I
C
= 0.5 A; V
CE
= 10 V
I
C
= 0.5 A; V
CE
= 5 V; f = 100 MHz
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
0.5 A
MHz
ns
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