參數(shù)資料
型號(hào): BDS20SMD
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
中文描述: 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AB
封裝: HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 20K
代理商: BDS20SMD
Semelab plc.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
BDS20 BDS20SMD
BDS21 BDS21SMD
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
Test Conditions
Min.
Typ.
Max.
Unit
DC Current gain
V
CB
= 80V
V
CE
= 40V
V
EB
= 5V
I
C
= 30mA
I
C
= 3A
I
C
= 5A
I
C
= 3A
I
C
= 0.5A
I
C
= 3A
I
B
= 12mA
I
B
= 20mA
V
CE
= 3V
V
CE
= 3V
V
CE
= 3V
0.2
0.5
2
120
2
4
2.5
1000
1000
mA
mA
mA
V
V
V
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5
°
C/W
Max. 62.5
°
C/W
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參數(shù)描述
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