參數(shù)資料
型號(hào): BDS20
英文描述: Silicon NPN Epitaxial Base Transistor In TO220 Metal Package(NPN 外延硅晶體管(TO220金屬封裝))
中文描述: npn型硅外延中的晶體管的TO220金屬包(npn型外延硅晶體管(的TO220金屬封裝))
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 20K
代理商: BDS20
Semelab plc.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
BDS20 BDS20SMD
BDS21 BDS21SMD
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
Test Conditions
Min.
Typ.
Max.
Unit
DC Current gain
V
CB
= 80V
V
CE
= 40V
V
EB
= 5V
I
C
= 30mA
I
C
= 3A
I
C
= 5A
I
C
= 3A
I
C
= 0.5A
I
C
= 3A
I
B
= 12mA
I
B
= 20mA
V
CE
= 3V
V
CE
= 3V
V
CE
= 3V
0.2
0.5
2
120
2
4
2.5
1000
1000
mA
mA
mA
V
V
V
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5
°
C/W
Max. 62.5
°
C/W
相關(guān)PDF資料
PDF描述
BDS21 Silicon PNP Epitaxial Base Transistor In TO220 Metal Package(PNP 外延硅晶體管(TO220金屬封裝))
BDS20 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS20SMD SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS21 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS21SMD SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
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