型號(hào): | BDS19SMD05 |
英文描述: | DIODE TVS 160V 1500W BI 5% SMC |
中文描述: | 進(jìn)步黨 |
文件頁(yè)數(shù): | 1/1頁(yè) |
文件大?。?/td> | 11K |
代理商: | BDS19SMD05 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
BDS19SMD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
BDS19 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
BDW21A | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA |
BDW21B | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA |
BDW22B | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :340V; Capacitance, Cd:1000pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:340V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BDS20 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR |
BDS20_09 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR |
BDS20SMD | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR |
BDS21 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
BDS210 | 功能描述:開(kāi)關(guān)配件 BDS210 RoHS:否 制造商:C&K Components 類(lèi)型:Cap 用于:Pushbutton Switches 設(shè)計(jì)目的: |