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參數(shù)資料
| 型號： | BDS19 |
| 英文描述： | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| 中文描述： | 進步黨Epitiaxial基地硅晶體管的TO220金屬包裝和SMD1包（民進黨外延型硅晶體管（的TO220金屬封裝或SMD1封裝）） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BDS19 |
Semelab plc.
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BDS18 BDS18SMD
BDS19 BDS19SMD
Parameter
Test Conditions
I
C
= 2A V
CC
=
–
80V
I
B1
= 0.2A
I
C
= 2A V
CC
=
–
80V
I
B1
=
–
I
B2
= 0.2A
Max.
Unit
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5
°
C/W
Max. 62.5
°
C/W
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
Test Conditions
BDS18
BDS19
BDS18
BDS19
Min.
Typ.
Max.
–
20
–
20
–
0.1
–
0.1
Unit
DC Current gain
Transition frequency
V
CB
=
–
120V
V
CB
=
–
150V
V
CE
=
–
60V
V
CE
=
–
75V
V
EB
=
–
5V
BDS18
BDS19
I
C
=
–
1A
I
B
=
–
0.1A
I
C
=
–
1A
I
C
=
–
0.5A V
CE
=
–
2V
I
C
=
–
4A
I
C
=
–
0.5A V
CE
=
–
10V
V
CE
=
–
2V
V
CE
=
–
2V
–
10
–
120
–
150
–
0.5
–
1.0
250
150
40
15
30
m
A
mA
m
A
V
V
V
V
MHz
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
f
T
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
THERMAL DATA
I
C
=
–
100mA
t
on
t
s
t
f
On Time
(t
d
+ t
r
)
Storage Time
Fall Time
0.5
1.5
0.3
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
相關PDF資料 |
PDF描述 |
|---|---|
| BDS20 | Silicon NPN Epitaxial Base Transistor In TO220 Metal Package(NPN 外延硅晶體管(TO220金屬封裝)) |
| BDS21 | Silicon PNP Epitaxial Base Transistor In TO220 Metal Package(PNP 外延硅晶體管(TO220金屬封裝)) |
| BDS20 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS20SMD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS21 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BDS19CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| BDS19SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS19SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| BDS20 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR |
| BDS20_09 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR |
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