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參數(shù)資料
| 型號(hào)： | BDS17 |
| 英文描述： | Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| 中文描述： | 硅npn型Epitiaxial中的晶體管的TO220金屬包裝和SMD1包（NNP外延型硅晶體管（的TO220金屬封裝或SMD1封裝）） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | BDS17 |
Semelab plc.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
BDS16 BDS16SMD
BDS17 BDS17SMD
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Parameter
Test Conditions
I
C
= 2A V
CC
= 80V
I
B1
= 0.2A
I
C
= 2A V
CC
= 80V
I
B1
=
–
I
B2
= 0.2A
Max.
Unit
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5
°
C/W
Max. 62.5
°
C/W
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
Test Conditions
BDS16
BDS17
BDS16
BDS17
Min.
Typ.
Max.
20
20
0.1
0.1
Unit
DC Current gain
Transition frequency
V
CB
= 120V
V
CB
= 150V
V
CE
= 60V
V
CE
= 75V
V
EB
= 5V
BDS16
BDS17
I
C
= 1A
I
B
= 0.1A
I
C
= 1A
I
C
= 0.5A
I
C
= 4A
I
C
= 0.5A
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
10
120
150
0.5
1.0
250
150
40
15
30
m
A
mA
m
A
V
V
V
V
MHz
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
f
T
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
THERMAL DATA
I
C
= 100mA
t
on
t
s
t
f
On Time
(t
d
+ t
r
)
Storage Time
Fall Time
0.5
3.0
0.4
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDS18 | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS19 | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS20 | Silicon NPN Epitaxial Base Transistor In TO220 Metal Package(NPN 外延硅晶體管(TO220金屬封裝)) |
| BDS21 | Silicon PNP Epitaxial Base Transistor In TO220 Metal Package(PNP 外延硅晶體管(TO220金屬封裝)) |
| BDS20 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
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|---|---|
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