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參數(shù)資料
| 型號： | BDS14 |
| 英文描述： | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| 中文描述： | 進步黨Epitiaxial基地硅晶體管的TO220金屬包裝和SMD1包（民進黨外延型硅晶體管（的TO220金屬封裝或SMD1封裝）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | BDS14 |
LA B
S E M E
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPRELIM. 7/00
Parameter
Test Conditions
BDS13
Min.
Typ.
Max.
–
500
–
500
–
500
–
1
–
1
–
1
Unit
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
V
CB
=
–
60V
V
CB
=
–
80V
V
CB
=
–
100V
V
CE
=
–
30V
V
CE
=
–
40V
V
CE
=
–
50V
BDS14
BDS15
BDS13
BDS14
BDS15
V
EB
=
–
5V
BDS13
BDS14
I
C
=
–
100mA
BDS15
I
C
=
–
5A
I
C
=
–
10A
I
B
=
–
0.5A
I
B
=
–
2.5A
I
C
=
–
10A
I
B
=
–
2.5A
I
C
=
–
5A
I
C
=
–
0.5A V
CE
=
–
4V
I
C
=
–
5A
I
C
=
–
10A
I
C
=
–
0.5A V
CE
=
–
4V
V
CE
=
–
4V
V
CE
=
–
4V
V
CE
=
–
4V
–
1
–
60
–
80
–
100
–
1
–
3
–
2.5
–
1.5
250
150
40
15
5
3
m
A
mA
mA
V
V
V
V
MHz
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
THERMAL DATA
R
THj-case
R
THcase-sink
R
THj-a
** Smooth flat surface using thermal grease.
Thermal resistance junction - case
Thermal resistance case - heatsink **
Thermal resistance junction - ambient
Max. 1.4
°
C/W
Typ. 1.0
°
C/W
Max. 80
°
C/W
Parameter
On Time
Storage Time
Fall Time
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
=
–
I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
m
s
m
s
m
s
t
on
t
s
t
r
(t
d
+ t
r
)
SWITCHING CHARACTERISTICS
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| BDS15SMD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS16 | Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS17 | Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDS140 | 功能描述:控制開關(guān) - RoHS:否 制造商:Omron Industrial 控制類型:Emergency Stop 觸點額定值:5 A at 125 VAC 觸點形式:1 Form B (SPST-NC) 電壓額定值: 電流額定值: 執(zhí)行器:Pushbutton 照明:N 安裝風格: |
| BDS14CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| BDS14SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS14SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES |
| BDS15 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
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