參數(shù)資料
型號(hào)： BDS11IG
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
中文描述： 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 14K
代理商： BDS11IG
Parameter
Test Conditions
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
Min.
Typ.
Max.
500
500
500
1
1
1
Unit
LA B
S E M E
BDS10IG
BDS11IG
BDS12IG
Prelim. 9/98
V
CB
= 60V
V
CB
= 80V
V
CB
= 100V
V
CE
= 30V
V
CE
= 40V
V
CE
= 50V
V
EB
= 5V
BDS10
BDS11
BDS12
I
C
= 5A
I
C
= 10A
I
C
= 100mA
I
B
= 0.5A
I
B
= 2.5A
I
C
= 10A
I
B
= 2.5A
I
C
= 5A
I
C
= 0.5A
I
C
= 5A
I
C
= 10A
I
C
= 0.5A
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
1
60
80
100
1
3
2.5
1.5
250
150
40
15
5
3
m
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
R
THcase-sink
R
THj-a
Thermal resistance junction - case
Thermal resistance case - heatsink **
Thermal resistance junction - ambient
Max. 1.4
°
C/W
Typ. 1.0
°
C/W
Max. 80
°
C/W
** Smooth flat surface using thermal grease.
Parameter
On Time
Storage Time
Fall Time
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
=
–
I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
m
s
m
s
m
s
t
on
t
s
t
r
(t
d
+ t
r
)
SWITCHING CHARACTERISTICS
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
BDS12IG SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
BDS10 Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝))
BDS11 Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝))
BDS12 Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝))
BDS13 Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝))
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